SST34HF3244 Datasheet, PDF (1/41 Pages) Silicon Storage Technology, Inc – 32 Mbit Concurrent SuperFlash + 4/8 Mbit PSRAM ComboMemory

32 Mbit Concurrent SuperFlash + 4/8 Mbit PSRAM ComboMemory
SST34HF3244 / SST34HF3282 / SST34HF3284
FEATURES:
SST34HF32x4x32Mb CSF + 4/8/16 Mb SRAM (x16) MCP ComboMemory
Data Sheet
• Flash Organization: 2M x16 or 4M x8
• Dual-Bank Architecture for Concurrent
Read/Write Operation
– 32 Mbit Top Sector Protection
– SST34HF32x4: 8 Mbit + 24Mbit
– SST34HF3282: 4 Mbit + 28 Mbit
• PSRAM Organization:
– 4 Mbit: 256K x16
– 8 Mbit: 512K x16
• Single 2.7-3.3V Read and Write Operations
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption:
– Active Current: 25 mA (typical)
– Standby Current: 20 µA (typical)
• Hardware Sector Protection (WP#)
– Protects 8 KWord in the smaller bank by holding
WP# low and unprotects by holding WP# high
• Hardware Reset Pin (RST#)
– Resets the internal state machine to reading
data array
• Byte Selection for Flash (CIOF pin)
– Selects 8-bit or 16-bit mode
• Sector-Erase Capability
– Uniform 2 KWord sectors
• Flash Chip-Erase Capability
• Block-Erase Capability
– Uniform 32 KWord blocks
• Erase-Suspend / Erase-Resume Capabilities
• Read Access Time
– Flash: 70 ns
– PSRAM: 70 ns
• Security ID Feature
– SST: 128 bits
– User: 256 Bytes
• Latched Address and Data
• Fast Erase and Program (typical):
– Sector-Erase Time: 18 ms
– Block-Erase Time: 18 ms
– Chip-Erase Time: 35 ms
– Program Time: 7 µs
• Automatic Write Timing
– Internal V_PP Generation
• End-of-Write Detection
– Toggle Bit
– Data# Polling
– Ready/Busy# pin
• CMOS I/O Compatibility
• JEDEC Standard Command Set
• Packages Available
– 56-ball LFBGA (8mm x 10mm)
– 62-ball LFBGA (8mm x 10mm)
• All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST34HF3244, SST34HF3282, and SST34HF3284
ComboMemory devices integrate either a 2M x16 or 4M x8
CMOS flash memory bank with either a 256K x16 or 512K
x16 CMOS pseudo SRAM (PSRAM) memory bank in a
multi-chip package (MCP). These devices are fabricated
using SST’s proprietary, high-performance CMOS Super-
Flash technology incorporating the split-gate cell design
and thick-oxide tunneling injector to attain better reliability
and manufacturability compared with alternate
approaches. The SST34HF32xx devices are ideal for
applications such as cellular phones, GPS devices, PDAs,
and other portable electronic devices in a low power and
small form factor system.
The SST34HF32xx feature dual flash memory bank archi-
tecture allowing for concurrent operations between the two
flash memory banks and the PSRAM. The devices can
read data from either bank while an Erase or Program
operation is in progress in the opposite bank. The two flash
memory banks are partitioned into 4 Mbit + 28 Mbit or 8
Mbit + 24 Mbit with top sector protection options for storing
boot code, program code, configuration/parameter data
and user data.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore, the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles. The SST34HF32xx devices offer a guaran-
teed endurance of 10,000 cycles. Data retention is rated at
greater than 100 years. With high-performance Program
operations, the flash memory banks provide a typical Pro-
gram time of 7 µsec. The entire flash memory bank can be
erased and programmed word-by-word in typically 4 sec-
onds for the SST34HF32xx, when using interface features
such as Toggle Bit, Data# Polling, or RY/BY# to indicate the
©2006 Silicon Storage Technology, Inc.
S71335-00-000
8/06
1
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. Intel is a registered trademark of Intel Corporation.
CSF and ComboMemory are trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.