SST36VF1601G Datasheet, PDF (15/36 Pages) Silicon Storage Technology, Inc – 16 Mbit (x8/x16) Concurrent SuperFlash

16 Mbit Concurrent SuperFlash
SST36VF1601G / SST36VF1602G
TABLE 7: CFI Query Identification String¹
Address
x16 Mode
10H
11H
12H
13H
14H
15H
16H
17H
18H
19H
1AH
Address
x8 Mode
20H
22H
24H
26H
28H
2AH
2CH
2EH
30H
32H
34H
Data²
0051H
0052H
0059H
0002H
0000H
0000H
0000H
0000H
0000H
0000H
0000H
Description
Query Unique ASCII string “QRY”
Primary OEM command set
Address for Primary Extended Table
Alternate OEM command set (00H = none exists)
Address for Alternate OEM extended Table (00H = none exits)
1. Refer to CFI publication 100 for more details.
2. In x8 mode, only the lower byte of data is output.
Data Sheet
T7.0 1342
TABLE 8: System Interface Information
Address Address
x16 Mode x8 Mode
Data¹ Description
1BH
1CH
1DH
1EH
1FH
20H
21H
22H
23H
24H
25H
26H
36H
38H
3AH
3CH
3EH
40H
42H
44H
46H
48H
4AH
4CH
0027H
0036H
0000H
0000H
0004H
0000H
0004H
0006H
0001H
0000H
0001H
0001H
V_DD Min (Program/Erase)
DQ₇-DQ₄: Volts, DQ₃-DQ₀: 100 millivolts
V_DD Max (Program/Erase)
DQ₇-DQ₄: Volts, DQ₃-DQ₀: 100 millivolts
V_PP min (00H = no V_PP pin)
V_PP max (00H = no V_PP pin)
Typical time out for Program 2^N µs (2⁴ = 16 µs)
Typical time out for min size buffer program 2^N µs (00H = not supported)
Typical time out for individual Sector/Block-Erase 2^N ms (2⁴ = 16 ms)
Typical time out for Chip-Erase 2^N ms (2⁶ = 64 ms)
Maximum time out for Program 2^N times typical (2¹ x 2⁴ = 32 µs)
Maximum time out for buffer program 2^N times typical
Maximum time out for individual Sector-/Block-Erase 2^N times typical (2¹ x 2⁴ = 32 ms)
Maximum time out for Chip-Erase 2^N times typical (2¹ x 2⁶ = 128 ms)
1. In x8 mode, only the lower byte of data is output.
T8.0 1342
©2006 Silicon Storage Technology, Inc.
15
S71342-00-000
12/06