SST34HF1681 Datasheet, PDF (14/30 Pages) Silicon Storage Technology, Inc – 16 Mbit Concurrent SuperFlash + 8 Mbit SRAM ComboMemory

16 Mbit Concurrent SuperFlash + 8 Mbit SRAM ComboMemory
SST34HF1681
Advance Specifications
AC CHARACTERISTICS
TABLE 12: SRAM READ CYCLE TIMING PARAMETERS
SST34HF1681-70
SST34HF1681-90
Symbol
Parameter
Min
Max
Min
Max
Units
T_RCS
Read Cycle Time
70
90
ns
T_AAS
Address Access Time
70
90
ns
T_BES
Bank Enable Access Time
70
90
ns
T_OES
Output Enable Access Time
35
45
ns
T_BYES
T_BLZS1
T_OLZS1
T_BYLZS1
T_BHZS1
T_OHZS1
T_BYHZS1
UBS#, LBS# Access Time
BES# to Active Output
Output Enable to Active Output
UBS#, LBS# to Active Output
BES# to High-Z Output
Output Disable to High-Z Output
UBS#, LBS# to High-Z Output
70
90
ns
0
0
ns
0
0
ns
0
0
ns
25
35
ns
25
35
ns
35
45
ns
T_OHS
Output Hold from Address Change
10
10
ns
T12.0 561
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 13: SRAM WRITE CYCLE TIMING PARAMETERS
SST34HF1681-70
Symbol
T_WCS
T_BWS
T_AWS
T_ASTS
T_WPS
T_WRS
T_BYWS
T_ODWS
T_OEWS
T_DSS
T_DHS
Parameter
Write Cycle Time
Bank Enable to End-of-Write
Address Valid to End-of-Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
UBS#, LBS# to End-of-Write
Output Disable from WE# Low
Output Enable from WE# High
Data Set-up Time
Data Hold from Write Time
Min
Max
70
60
60
0
60
0
60
30
0
30
0
SST34HF1681-90
Min
Max
90
80
80
0
80
0
80
40
0
40
0
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
T13.0 561
©2001 Silicon Storage Technology, Inc.
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