SST39WF1601_10 Datasheet, PDF (13/29 Pages) Silicon Storage Technology, Inc – 16 Mbit (x16) Multi-Purpose Flash Plus

16 Mbit Multi-Purpose Flash Plus
SST39WF1601 / SST39WF1602
AC CHARACTERISTICS
Data Sheet
TABLE 14: Read Cycle Timing Parameters V_DD = 1.65-1.95V
Symbol
Parameter
Min
Max
Units
T_RC
Read Cycle Time
70
ns
T_CE
Chip Enable Access Time
70
ns
T_AA
Address Access Time
70
ns
T_OE
Output Enable Access Time
35
ns
T_CLZ1
T_OLZ1
CE# Low to Active Output
OE# Low to Active Output
0
ns
0
ns
T_CHZ1
CE# High to High-Z Output
40
ns
T_OHZ1
T_OH1
OE# High to High-Z Output
Output Hold from Address Change
40
ns
0
ns
T_RP1
RST# Pulse Width
500
ns
T_RHR1
T_RY1,2
RST# High before Read
RST# Pin Low to Read Mode
50
ns
20³
µs
T14.0 1297
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. This parameter applies to Sector-Erase, Block-Erase and Program operations.
This parameter does not apply to Chip-Erase operations.
3. This parameter is 100 µs if reset after an Erase operation.
TABLE 15: Program/Erase Cycle Timing Parameters
Symbol Parameter
Min
Max
Units
T_BP
Word-Program Time
T_AS
Address Setup Time
T_AH
Address Hold Time
40
µs
0
ns
50
ns
T_CS
T_CH
T_OES
WE# and CE# Setup Time
WE# and CE# Hold Time
OE# High Setup Time
0
ns
0
ns
0
ns
T_OEH
T_CP
T_WP
T_WPH1
T_CPH1
T_DS
T_DH1
T_IDA1
T_SE
OE# High Hold Time
CE# Pulse Width
WE# Pulse Width
WE# Pulse Width High
CE# Pulse Width High
Data Setup Time
Data Hold Time
Software ID Access and Exit Time
Sector-Erase
10
ns
50
ns
50
ns
30
ns
30
ns
50
ns
0
ns
150
ns
50
ms
T_BE
T_SCE
Block-Erase
Chip-Erase
50
ms
200
ms
T15.0 1297
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2009 Silicon Storage Technology, Inc.
13
S71297-05-000
11/09