SST39WF1601_10 Datasheet, PDF (1/29 Pages) Silicon Storage Technology, Inc – 16 Mbit (x16) Multi-Purpose Flash Plus

16 Mbit (x16) Multi-Purpose Flash Plus
SST39WF1601 / SST39WF1602
FEATURES:
SST39WF160x2.7V 16Mb (x16) MPF+ memories
Data Sheet
• Organized as 1M x16
• Single Voltage Read and Write Operations
– 1.65-1.95V
• Superior Reliability
– Endurance: 100,000 Cycles (Typical)
– Greater than 100 years Data Retention
• Low Power Consumption (typical values at 5 MHz)
– Active Current: 5 mA (typical)
– Standby Current: 5 µA (typical)
– Auto Low Power Mode: 5 µA (typical)
• Hardware Block-Protection/WP# Input Pin
– Top Block-Protection (top 32 KWord)
for SST39WF1602
– Bottom Block-Protection (bottom 32 KWord)
for SST39WF1601
• Sector-Erase Capability
– Uniform 2 KWord sectors
• Block-Erase Capability
– Uniform 32 KWord blocks
• Chip-Erase Capability
• Erase-Suspend/Erase-Resume Capabilities
• Hardware Reset Pin (RST#)
• Security-ID Feature
– SST: 128 bits; User: 128 bits
• Fast Read Access Time:
– 70 ns
• Latched Address and Data
• Fast Erase and Word-Program:
– Sector-Erase Time: 36 ms (typical)
– Block-Erase Time: 36 ms (typical)
– Chip-Erase Time: 140 ms (typical)
– Word-Program Time: 28 µs (typical)
• Automatic Write Timing
– Internal V_PP Generation
• End-of-Write Detection
– Toggle Bits
– Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard
– Flash EEPROM Pin Assignments and
Command Sets
• Packages Available
– 48-ball TFBGA (6mm x 8mm)
– 48-ball WFBGA (5mm x 6mm)
– 48-ball WFBGA (4mm x 6mm)
• All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST39WF1601/1602 devices are 1M x16 CMOS
Multi-Purpose Flash Plus (MPF+) manufactured with
SST’s proprietary, high-performance CMOS SuperFlash
technology. The split-gate cell design and thick-oxide tun-
neling injector attain better reliability and manufacturability
compared with alternate approaches. The SST39WF1601/
1602 write (Program or Erase) with a 1.65-1.95V power
supply. These devices conform to JEDEC standard pin
assignments for x16 memories.
Featuring high performance Word-Program, the
SST39WF1601/1602 devices provide a typical Word-Pro-
gram time of 28 µsec. These devices use Toggle Bit or
Data# Polling to indicate the completion of Program opera-
tion. To protect against inadvertent write, they have on-chip
hardware and Software Data Protection schemes.
Designed, manufactured, and tested for a wide spectrum of
applications, these devices are offered with a guaranteed
typical endurance of 100,000 cycles. Data retention is rated
at greater than 100 years.
The SST39WF1601/1602 devices are suited for applica-
tions that require convenient and economical updating of
program, configuration, or data memory. For all system
applications, they significantly improve performance and
reliability, while lowering power consumption. They inher-
ently use less energy during Erase and Program than
alternative flash technologies. The total energy consumed
is a function of the applied voltage, current, and time of
application. Since for any given voltage range, the Super-
Flash technology uses less current to program and has a
shorter erase time, the total energy consumed during any
Erase or Program operation is less than alternative flash
technologies. These devices also improve flexibility while
lowering the cost for program, data, and configuration stor-
age applications.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose
Erase and Program times increase with accumulated
Erase/Program cycles.
©2009 Silicon Storage Technology, Inc.
S71297-05-000
11/09
1
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.