SST39VF6401B Datasheet, PDF (1/30 Pages) Silicon Storage Technology, Inc – 64 Mbit (x16) Multi-Purpose Flash Plus

64 Mbit (x16) Multi-Purpose Flash Plus
SST39VF6401B / SST39VF6402B
FEATURES:
SST39VF640xB2.7V 64Mb (x16) MPF+ memories
Data Sheet
• Organized as 4M x16
• Single Voltage Read and Write Operations
– 2.7-3.6V
• Superior Reliability
– Endurance: 100,000 Cycles (Typical)
– Greater than 100 years Data Retention
• Low Power Consumption (typical values at 5 MHz)
– Active Current: 9 mA (typical)
– Standby Current: 3 µA (typical)
– Auto Low Power Mode: 3 µA (typical)
• Hardware Block-Protection/WP# Input Pin
– Top Block-Protection (top 32 KWord)
for SST39VF6402B
– Bottom Block-Protection (bottom 32 KWord)
for SST39VF6401B
• Sector-Erase Capability
– Uniform 2 KWord sectors
• Block-Erase Capability
– Uniform 32 KWord blocks
• Chip-Erase Capability
• Erase-Suspend/Erase-Resume Capabilities
• Hardware Reset Pin (RST#)
• Security-ID Feature
– SST: 128 bits; User: 128 bits
• Fast Read Access Time:
– 70 ns
– 90 ns
• Latched Address and Data
• Fast Erase and Word-Program:
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 40 ms (typical)
– Word-Program Time: 7 µs (typical)
• Automatic Write Timing
– Internal V_PP Generation
• End-of-Write Detection
– Toggle Bits
– Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard
– Flash EEPROM Pin Assignments
– Software command sequence compatibility
- Address format is 11 bits, A₁₀-A₀
- Block-Erase 6th Bus Write Cycle is 30H
- Sector-Erase 6th Bus Write Cycle is 50H
• Packages Available
– 48-lead TSOP (12mm x 20mm)
– 48-ball TFBGA (8mm x 10mm)
• All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST39VF640xB devices are 4M x16 CMOS Multi-
Purpose Flash Plus (MPF+) manufactured with SST’s pro-
prietary, high-performance CMOS SuperFlash technology.
The split-gate cell design and thick-oxide tunneling injector
attain better reliability and manufacturability compared with
alternate approaches. The SST39VF640xB write (Pro-
gram or Erase) with a 2.7-3.6V power supply. These
devices conform to JEDEC standard pin assignments for
x16 memories.
Featuring high performance Word-Program, the
SST39VF640xB devices provide a typical Word-Program
time of 7 µsec. These devices use Toggle Bit or Data# Poll-
ing to indicate the completion of Program operation. To pro-
tect against inadvertent write, they have on-chip hardware
and Software Data Protection schemes. Designed, manu-
factured, and tested for a wide spectrum of applications,
these devices are offered with a guaranteed typical endur-
ance of 100,000 cycles. Data retention is rated at greater
than 100 years.
The SST39VF640xB devices are suited for applications that
require convenient and economical updating of program,
©2006 Silicon Storage Technology, Inc.
S71288-02-000
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configuration, or data memory. For all system applications,
they significantly improve performance and reliability, while
lowering power consumption. They inherently use less
energy during Erase and Program than alternative flash
technologies. The total energy consumed is a function of
the applied voltage, current, and time of application. Since
for any given voltage range, the SuperFlash technology
uses less current to program and has a shorter erase time,
the total energy consumed during any Erase or Program
operation is less than alternative flash technologies. These
devices also improve flexibility while lowering the cost for
program, data, and configuration storage applications.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles.
To meet high-density, surface mount requirements, the
SST39VF640xB devices are offered in 48-lead TSOP and
48-ball TFBGA packages. See Figures 1 and 2 for pin
assignments.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.