SST34HF162G Datasheet, PDF (1/31 Pages) Silicon Storage Technology, Inc – 16 Mbit Dual-Bank Flash + 2/4 Mbit SRAM ComboMemory

16 Mbit Dual-Bank Flash + 2/4 Mbit SRAM ComboMemory
SST34HF162G / SST34HF164G
SST34HF162G/164G16Mb Dual-Bank Flash + 2/4 Mb SRAM MCP ComboMemory
FEATURES:
Preliminary Specifications
• Flash Organization: 1M x16
– 16 Mbit: 12 Mbit + 4 Mbit
• Concurrent Operation
– Read from or Write to SRAM while
Erase/Program Flash
• SRAM Organization:
– 2 Mbit:128K x16
– 4 Mbit: 256K x16
• Single 2.7-3.3V Read and Write Operations
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption: (typical values @ 5 MHz)
– Active Current: Flash 10 mA (typical)
SRAM 6 mA (typical)
– Standby Current: 10 µA (typical)
• Hardware Sector Protection (WP#)
– Protects 4 outer most sectors (4 KWord) in the
larger bank by holding WP# low and unprotects
by holding WP# high
• Hardware Reset Pin (RST#)
– Resets the internal state machine to reading
data array
• Sector-Erase Capability
– Uniform 2 KWord sectors
• Block-Erase Capability
– Uniform 32 KWord blocks
• Read Access Time
– Flash: 70 ns
– SRAM: 70 ns
• Erase-Suspend / Erase-Resume Capabilities
• Latched Address and Data
• Fast Erase and Word-Program (typical):
– Sector-Erase Time: 18 ms
– Block-Erase Time: 18 ms
– Chip-Erase Time: 35 ms
– Program Time: 7 µs
• Automatic Write Timing
– Internal V_PP Generation
• End-of-Write Detection
– Toggle Bit
– Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard Command Set
• Packages Available
– 48-ball LFBGA (6mm x 8mm)
– 48-ball LBGA (10mm x 12mm)
– Non-Pb (lead-free) packages available
PRODUCT DESCRIPTION
The SST34HF16xG ComboMemory devices integrate a
1M x16 CMOS flash memory bank with either 128K x16 or
256K x16 CMOS SRAM memory bank in a multi-chip
package (MCP). These devices are fabricated using SST’s
proprietary, high-performance CMOS SuperFlash technol-
ogy incorporating the split-gate cell design and thick-oxide
tunneling injector to attain better reliability and manufactur-
ability compared with alternate approaches. The
SST34HF16xG devices are ideal for applications such as
cellular phones, GPS devices, PDAs, and other portable
electronic devices in a low power and small form factor sys-
tem.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore, the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles. The SST34HF16xG devices offer a guaran-
teed endurance of 10,000 cycles. Data retention is rated at
greater than 100 years. With high-performance Program
©2004 Silicon Storage Technology, Inc.
S71276-00-000
11/04
1
operations, the flash memory banks provide a typical Pro-
gram time of 7 µsec. The entire flash memory bank can be
erased and programmed word-by-word in 4 seconds (typi-
cally) for the SST34HF16xG, when using interface features
such as Toggle Bit or Data# Polling to indicate the comple-
tion of Program operation. To protect against inadvertent
flash write, the SST34HF16xG devices contain on-chip
hardware and software data protection schemes.
The flash and SRAM operate as two independent memory
banks with respective bank enable signals. The memory
bank selection is done by two bank enable signals. The
SRAM bank enable signal, BES#, selects the SRAM bank.
The flash memory bank enable signal, BEF#, has to be
used with Software Data Protection (SDP) command
sequence when controlling the Erase and Program opera-
tions in the flash memory bank. The memory banks are
superimposed in the same memory address space where
they share common address lines, data lines, WE# and
OE# which minimize power consumption and area. See
Figure 1 for memory organization.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
ComboMemory is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.