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SH0029E_15 Datasheet, PDF (2/2 Pages) Solid States Devices, Inc – Schottky Silicon Carbide Centertap Rectifier
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
ELECTRICAL CHARACTERISTICS 3/
Instantaneous Forward Voltage Drop
(TA=25ºC, 300 - 500 sec pulse)
Instantaneous Forward Voltage Drop
(300 - 500 sec pulse)
Reverse Leakage Current
(Rated VR, TA = 25ºC, 300 sec pulse minimum)
Reverse Leakage Current
(Rated VR, TA = 150ºC, 300 sec pulse minimum)
Junction Capacitance
(VR = 10V, f = 1MHz, TA = 25oC)
SSR20C120CTM and
SSR20C120CTJ Series
Symbol
IF = 2.0 A
VF1
IF = 5.0 A
VF2
IF = 10 A
VF3
TA= -55ºC, IF = 5 A
VF4
TA= 150 ºC, IF = 5 A
VF5
IR1
Min
––
––
––
––
––
––
IR2
––
CJ
––
Typ
1.06
1.25
1.53
1.25
1.45
10
Max
1.20
1.50
1.80
1.60
1.80
50
Units
VDC
VDC
A
15
250
A
375
450
pF
CASE OUTLINE: TO-254 (M)
CASE OUTLINE: TO-257 (J)
Notes: *Pulse Test: Pulse Width = 300 sec, Duty Cycle = 2%
1/ For ordering information, price, and availability, contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available
on request.
3/ Per leg. Unless otherwise specified, all electrical characteristics
@25ºC.
Package
TO-254 (M)
TO-257 (J)
PIN ASSIGNMENT
Pin 1
Pin 2
Anode
Cathode
Anode
Cathode
Pin 3 (Tab)
Anode
Anode
Available Part Numbers:
SSR20C080CTM, SSR20C080CTMDB, SSR20C080CTMUB
SSR20C100CTM, SSR20C100CTMDB, SSR20C100CTMUB
SSR20C120CTM, SSR20C120CTMDB, SSR20C120CTMUB
SSR20C080CTJ, SSR20C080CTJDB, SSR20C080CTJUB
SSR20C100CTJ, SSR20C100CTJDB, SSR20C100CTJUB
SSR20C120CTJ, SSR20C120CTJDB, SSR20C120CTJUB
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: SH0029E
DOC