SH0029E_15 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – Schottky Silicon Carbide Centertap Rectifier

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
Designer’s Data Sheet
Part Number / Ordering Information ^1/
SSR20C __ __ __ __ __
│ │ │ │ └ Screening ^2/
││││
__ = Not Screened
││││
TX = TX Level
││││
TXV = TXV Level
││││
S = S Level
│ │ │ └ Lead Bend Options
│││
__ = Straight Leads
│││
DB = Down Bend
│││
UB = Up Bend
│ │ └ Package
││
M = TO-254
││
J = TO-257
│ └ Configuration CT = Centertap
└ Voltage
080 = 800 V
100 = 1000 V
120 = 1200 V
MAXIMUM RATINGS^3/
Peak Repetitive and Peak Reverse Voltage
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave)
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, T_A = 25^oC, per leg)
Operating & Storage Temperature
Junction Temperature
Maximum Thermal Resistance
(Junction to Case)
TO-254 (M)
SSR20C120CTM and
SSR20C120CTJ Series
20 A / 1200 V
Schottky Silicon Carbide
Centertap Rectifier
FEATURES:
 1200 Volt Silicon Carbide Schottky Rectifier
 Average Output Current: 20 Amps
 No Reverse Recovery
 No Forward Recovery
 No Switching Time Change Over Temperature
 Small Package Size
 TO-257: 3.2 gr (typ); TO-254: 6.3 gr (typ)
 TX, TXV, and Space Level Screening Available.
Consult Factory
SSR20C080CT
SSR20C100CT
SSR20C120CT
Per Leg
Total
Symbol
V_RRM
V_R
I_O
I_FSM
T_OP & T_stg
T_J
R_JC
Value
800
1000
1200
10
20
50
-55 to +250
-55 to +250
1.5
TO-257 (J)
Units
Volts
Amps
Amps
o_C
o_C
o_C/W
Notes:
1/ For ordering information, price, and availability, contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Per leg. Unless otherwise specified, all electrical characteristics @25ºC.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: SH0029E
DOC