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SFT5333 Datasheet, PDF (2/2 Pages) Solid States Devices, Inc – 2 AMP 100 VOLTS HIGH SPEED PNP TRANSISTOR
SFT5333
ELECTRICAL CHARACTERISTICS
Emitter Cutoff Current
(VEB = 6VDC)
DC Current Gain *
(IC = 1.0 ADC , VCE = 5 VDC)
(IC = 2.0 ADC , VCE = 5 VDC)
Collector-Emitter Saturation Voltage *
(IC = 1.0 ADC , IB =100 mADC)
(IC = 2.0ADC , IB = 200 mADC)
Base-Emitter Voltage *
(IC = 2.0 ADC , VCE = 4 VDC)
Current Gain Bandwidth Product
(IC =1.0 ADC , VCE =10 VDC, f =10MHz)
Output Capacitance
(VCB = 30VDC , IE = 0ADC, f =1.0MHz)
Input Capacitance
(VBE = 6VDC , IC = 0ADC, f =1.0MHz)
Turn On Time
Turn Off Time
(VCC =20VDC , IC =1.0ADC,
VEB(OFF)=3.7VDC,
IB1=IB2=100mADC, RL=20 Ohms)
*Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
CASE OUTLINE: TO-5
PIN 1: EMITTER
PIN 2: BASE
PIN 3: COLLECTOR
PRELIMINARY
SOLID STATE DEVICES, INC.
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: (562) 404-4474 * Fax: (562) 404-1773
SYMBOL
MIN MAX UNITS
IEBO
-
1
µA
HFE
VCE (SAT)
VBE (ON)
40
250
40
-
0.45
Volts
-
1.0
-
1.5
Volts
fT
85
-
MHz
Cob
-
75
pF
Cib
-
300
pF
t(on)
-
150
ns
t(off)
-
450
ns