SFT5333 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – 2 AMP 100 VOLTS HIGH SPEED PNP TRANSISTOR

PRELIMINARY
SOLID STATE DEVICES, INC.
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: [phone] * Fax: [phone]
DESIGNER'S DATA SHEET
FEATURES:
• Radiation Tolerant
• Fast Switching, 150ns MAX t(on)
• High Frequency, fT 85MHz MIN.
• BVCEO 70Volts MIN.
• Low Saturation Voltage.
• 200^oC Operating, Gold Eutectic Die Attach.
• Designed for Complementary Use with SFT4300.
SFT5333
2 AMP
100 VOLTS
HIGH SPEED
PNP TRANSISTOR
TO-5
MAXIMUM RATINGS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation @ T_C=100^oC
Derate above 100^oC
Operating and Storage Temperature
Thermal Resistance, Junction to Case
SYMBOL
V_CEO
V_CBO
V_EBO
I_C
I_B
P_D
T_J, T_STG
R_θJC
VALUE
70
100
6
2
1
6.6
66
-65 to +200
15.2
UNITS
Volts
Volts
Volts
Amps
Amps
W
mW/^oC
o_C
o_C/W
ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(I_C = 30 mA_DC)
Collector-Base Breakdown Voltage
(I_C = 200 µA_DC)
Emitter-Base Breakdown Voltage
(I_E = 200 µA_DC)
Collector Cutoff Current
(V_CB =90V_DC, T_C =25^oC)
(V_CB =90V_DC, T_C =100^oC)
Collector Cutoff Current
(V_CE = 40 V_DC)
SYMBOL
BV_CEO
BV_CBO
BV_EBO
I_CBO
I_CEO
MIN
70
100
6
-
-
MAX
-
-
-
1
75
5
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0002C
UNITS
Volts
Volts
Volts
µA
µA
µA