SFT501_1 Datasheet, PDF (2/2 Pages) Solid States Devices, Inc – HIGH SPEED PNP Transistor

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
SFT501 and SFT503
Series
Electrical Characteristic ^4/
Symbol Min Typ Max Units
Collector – Emitter Breakdown Voltage
I_C = 50mA BV_CEO
150
200
–– Volts
Collector – Base Breakdown Voltage
I_C = 200µA BV_CBO
200
275
–– Volts
Emitter – Base Breakdown Voltage
I_E = 200µA BV_EBO
7
13
–– Volts
Collector – Cutoff Current
V_CE = 100 V I_CEO
––
––
1.0
µA
Collector – Cutoff Current
V_CB = 100 V I_CBO
––
––
500
nA
Emitter – Cutoff Current
V_EB = 6 V
I_EBO
––
––
500
nA
DC Current Gain *
SFT501
SFT503
Collector – Emitter Saturation Voltage *
Base – Emitter Saturation Voltage *
V_CE = 5V, I_C = 50mA
V_CE = 5V, I_C = 2.5A
V_CE = 5V, I_C = 5A
V_CE = 5V, I_C = 50mA
h_FE
V_CE = 5V, I_C = 2.5A
V_CE = 5V, I_C = 5A
20
––
––
30
––
––
20
50
70
––
––
––
––
50
––
––
40
70
––
I_C = 2.5A, I_B = 250mA
I_C = 5.0A, I_B = 500mA
V_CE(Sat)
––
––
0.35
0.6
0.75
1.5
Vol ts
I_C = 2.5A, I_B = 250mA
I_C = 5.0A, I_B = 500mA
V_{B E(S at )}
––
––
1.0
1.2
1.3
1.5
Vol ts
Current Gain Bandwidth Product
V_CE = 5V, I_C = 0.5A, f = 10MHz
f_T
40
60
–– MHz
Output Capacitance
V_CB = 10V, I_E = 0A, f = 1MHz
c_ob
––
130
225
pF
Input Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
V_BE = 10V, I_C = 0A, f = 1MHz
C_ib
t_d
V_CC = 50V,
t_r
I_C = 5A,
I_B1 = I_B2 = 0.5A
t_S
t_f
––
450
600
pF
––
25
50
nsec
––
40
250 nsec
––
320
600 nsec
––
130
300 nsec
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
B17BH DATA SHEET #: TR0040D
DOC