SFT501_1 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – HIGH SPEED PNP Transistor

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information ^1/
SFT501 __ __
SFT503 __ __
│ └ _Screening ^2/ _{__ = Not Screen}
│
TX = TX Level
│
TXV = TXV Level
│
S = S Level
│
└ _Package ^3/
__ = TO-5
SFT501 and SFT503
Series
5 AMP
200 Volts
HIGH SPEED
PNP Transistor
Features:
• Radiation Tolerant
• Fast Switching
• High Frequency, 50 MHz Typical
• BVCEO 150 Volts Min
• High Linear Gain
• Very Low Leakage and Saturation
• 200ºC Operating Temperature
• Gold Eutectic Die Attach
• Designed for Complementary Use with SFT502 and
SFT504
Maximum Ratings
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Continues Collector Current
Base Current
Power Dissipation @ TC = 50ºC
Derate above 50ºC
Operating & Storage Temperature
Maximum Thermal Resistance
Symbol
V_CEO
V_CBO
V_EBO
I_C
I_B
P_D
Junction to Case
Top & Tstg
R_θJC
Value
150
200
7
5
1
10
66.6
-65 to +200
22
Units
Volts
Volts
Volts
Amps
Amps
W
mW/ºC
ºC
ºC/W
NOTES:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening per MIL-PRF-19500
3/ For Package Outlines Contact Factory.
4/
Unless Otherwise Specified, All Electrical Characteristics
@25ºC.
Available parts:
SFT501
SFT503
TO-5
Package
TO-5
PIN ASSIGNMENT
Pin 1
Emitter
Pin 2
Base
Pin 3 (Case)
Collector
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
B17BH DATA SHEET #: TR0040D
DOC