FR0016 Datasheet, PDF (2/2 Pages) Solid States Devices, Inc – P-Channel MOSFET

Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
Electrical Characteristics ^4/
Drain to Source Breakdown Voltage
Drain to Source Breakdown Voltage
Temperature Coefficient
Drain to Source On State Resistance
Gate Threshold Voltage
Gate to Source Leakage
Zero Gate Voltage Drain Current
Forward Transconductance
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
Diode Forward Voltage
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SFRC9130S.5B
Symbol Min Typ Max Units
V_GS = 0V, I_D =0.25 mA BV_DSS
-100 –– ––
V
V_GS = 0V, I_D =0.25 mA dBV_DSS/dT ––
V_GS = 10V, I_D = 5A, Tj= 25^oC
V_GS = 10V, I_D = 10A, Tj= 25^oC
R_DS(on)
––
––
V_DS = 5 V, I_D = 250µA V_GS(th)
-2.0
-0.1 ––
240 300
300 ––
–– -4.0
V/ ^oC
mΩ
V
V_GS = ±20V
V_DS = -100V, V_GS = 0V, T_j = 25^oC
V_DS = -80V, V_GS = 0V, T_j = 125^oC
V_DS = 40V, I_D = 5A, T_j = 25^oC
V_GS = 10V
V_DS = 80V
I_D = 10A
V_GS = 10V
V_DS = 50V
I_D = 10A
R_G = 12Ω
I_F = 10A, V_GS = 0V
I_GSS
I_DSS
g_fs
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
V_SD
–– 5 ±100 nA
–– 0.01 10 µA
–– 1 100 µA
4 5.2 –– Mho
–– 30 38
–– 5.5 ––
nC
–– 1.5 ––
–– 15 35
––
––
25
45
55
100
nsec
–– 25 60
–– 2.00 4.00 V
I_F = 10A, di/dt = 100A/usec
t_rr
Q_rr
V_GS = 0V
C_iss
V_DS = 25V
C_oss
f = 1 MHz
C_rss
––
120 350
0.55 2.5
nsec
µC
–– 800 1035
–– 160 240 pF
–– 60 90
NOTES:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
4/ Unless Otherwise Specified, All Electrical Characteristics @25^oC.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FR0016A
DOC