FR0016 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – P-Channel MOSFET

Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
POWERShield^TM
Technology
PS-Hard Radiation Hardened MOSFETs
SFRC9130
__ B__
│ └ Screening ^2/ __ = Commercial
│
TX = TX Level
│
TXV = TXV Level
│
S = S Level
│
└ Package: S.5 = SMD.5
Maximum Ratings
Drain - Source Voltage
Gate – Source Voltage
Max. Continuous Drain Current (package limited)
Max. Avalanche current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Total Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
(Junction to Case)
SFRC9130S.5B
10 AMP /100 Volts
300 mΩ
Radiation Tolerant
P-Channel MOSFET
Features:
• Advanced POWERShield^TM Technology
• TID 100K Rad
• Excellent high temperature stability
• Hermetically Sealed Power Package
• Low Total Gate Charge
• Fast Switching
• Replacement for IRHNJ9130 and F9130 types
@ T_C = 25ºC
@ T_C = 100ºC
@ L= 5.0 mH
@ L= 5.0 mH
@ L= 5.0 mH
@ T_C = 25ºC
Symbol
V_DSS
V_GS
I_D1
I_D2
I_AR
E_AR
E_AS
P_D
T_OP & T_STG
R_0JC
Value
-100
±20
10
7
9.8
5.2
320
75
-55 to +150
1.65
Units
V
V
A
A
mJ
mJ
W
ºC
ºC/W
PACKAGE OUTLINE:
SMD.5
PINOUT:
PIN 1: DRAIN
PIN 2: SOURCE
PIN 3: GATE
.408
.392
.304
.288
3x
.020
.010
.030 MIN
2x
.103
.087
.128
.030 MIN
.112
.233
.217
.304
.145
.288
.115
2x .010
MAX
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FR0016A
DOC