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FP0045E Datasheet, PDF (2/3 Pages) Solid States Devices, Inc – P-Channel POWER MOSFET | |||
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Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4470 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics 4/
Drain to Source Breakdown Voltage
(VGS = 0V, ID = 250ïA)
Drain to Source On State Resistance
(VGS = -10V, ID = 60A)
Drain to Source On State Resistance
(VGS = -10V, ID = 30A)
Gate Threshold Voltage
(VDS = VGS, ID = -250ïA)
Forward Transconductance
(VDS > ID(on) x RDS(on) Max, IDs = 50% of Rated ID)
Zero Gate Voltage Drain Current
(VDS = 50 V, VGS = 0V)
(VDS = 40 V, VGS = 0V)
Gate to Source Leakage (For
Gate to Source Leakage
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
Diode Forward Voltage
Diode Reverse Recovery Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SFF60P05M
SFF60P05Z
Symbol Min
BVDSS
-50
Typ Max Units
-70
ââ Volts
RDS(on)1
ââ
0.021 0.033
ï
RDS(on)2
ââ
0.021
ââ
ï
VGS(th)
-2.0
-2.8
-4.0 Volts
gfs
ââ
50
ââ
S
TA = 25oC
TA = 125oC
At Rated VGS
VGS = -10V
VDD = 40V
ID = 60A
VDD = 25 V
ID = 30 A
RL = 6.2ï
IS = Rated ID
VGS = 0V
TJ = 25ºC
IF = 10A
di/dt = 100A/usec
VGS = 0V
VDS = -25V
f = 1 MHz
IDSS
IGSS
Qg
Qgs
Qgd
t(on)
td(on)
tr
t(off)
td(off)
tf
VSD
trr
Qrr
Ciss
Coss
Crss
ââ 0.005 1
ââ
ââ
50
ïA
ââ
ââ
-10
10
-100
100
ïA
ââ
200 300
ââ
20
50
nC
ââ
80
125
ââ
ââ
125
ââ
40
ââ
ââ
20
ââ
ns
ââ
ââ
225
ââ
90
ââ
ââ
60
ââ
ââ
-1.3 -1.9 Volts
ââ
140 200
ns
ââ
ââ
ââ
ïC
ââ 6000 ââ
ââ 1800 ââ
pF
ââ
500
ââ
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FP0045E
DOC
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