FP0045E Datasheet, PDF (1/3 Pages) Solid States Devices, Inc – P-Channel POWER MOSFET

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information ^1/
SFF60P05 _{__ __ __}
│ │ └ Screening ^2/
││
__ = Not Screened
││
TX = TX Level
││
TXV = TXV Level
││
S = S Level
│ └ ^{Lead Option}
│
__ = Straight Leads
│
DB = Down Bend
│
└
UB = Up Bend
Package ^3/
M = TO-254
Z = TO-254Z
Maximum Ratings^4/
Drain - Source Voltage
Gate – Source Voltage
Continuous Drain Current
Operating & Storage Temperature
Thermal Resistance, Junction to Case
Total Device Power Dissipation
SFF60P05M
SFF60P05Z
-60 AMP/-50 Volts
25 m typical
P-Channel
POWER MOSFET
Features:
 Rugged Construction with Poly Silicon Gate
 Low RDS(on) and High Transconductance
 Excellent High Temperature Stability
 Very Fast Switching Speed
 Fast Recovery and Superior dv/dt Performance
 Increased Reverse Energy Capability
 Low Input and Transfer Capacitance for Easy
Paralleling
 Hermetically Sealed
 TX, TXV, and Space Level Screening Available.
Consult Factory.
T_C = 25ºC
T_C = -55ºC
Symbol
V_DS
V_GS
I_D
T_OP & T_STG
R_JC
P_D
Value
-50
+20
-60
-55 to +150
0.8
156
118
Units
V
V
A
ºC
ºC/W
Watts
NOTES:
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Maximum current limited by package configuration.
4/ Unless otherwise specified, all electrical characteristics @25^oC.
TO-254 (M)
TO-254Z (Z)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FP0045E
DOC