FP0035_15 Datasheet, PDF (2/2 Pages) Solid States Devices, Inc – P-CHANNEL POWER MOSFET

SFF9130-28D
PRELIMINARY
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
ELECTRICAL CHARACTERISTICS @ T_J =25^oC (Unless Otherwise Specified)
RATING
SYMBOL MIN
TYP
Drain to Source Breakdown Voltage
(VGS =0 V, ID =1mA)
BV_DSS
-100
-
Temperature Coefficient of Breakdown Voltage
)BV_DSS
)T_J
-
0.87
Drain to Source ON State Resistance ^1/
(VGS = -10 V)
I_D = 7A
I_D = 11A
R_DS(on)
-
-
-
-
Gate Threshold Voltage
(VDS =VGS, ID =250:A)
Forward Transconductance
(VDS > ID(on) x RDS (on) Max, IDS = 7A)
V_GS(th)
-2.0
-
gf_s
3.0
5.0
Zero Gate Voltage Drain Current
(VDS = 80% rated VDS, VGS =0 V, T_A = 25^oC )
(VDS = 80% rated VDS, VGS =0 V, T_A = 125^oC )
I_DSS
-
-
-
-
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
At rated VGS
I_GSS
-
-
-
-
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
VGS = -10 Volts
Qg
15
26
50% rated VDS
Qgs
1
3
ID = -11A
Qgd
2
14
Turn on Delay Time
VDD = 50% of
t_{d (on)}
-
15
Rise Time
rated VDS
tr
-
10
Turn off DELAY Time
Fall Time
ID = 11A
t_{d (off)}
-
30
RG = 7.5S
tf
-
12
Diode Forward Voltage
(I_S = rated I_D, V_GS = 0V, T_J = 25^oC)
V_SD
-
-
Diode Reverse Recovery Time
Reverse Recovery Charge
TJ = 25^oC
IF = 10A
di/dt = 100A/:sec
t_rr
Q_RR
-
-
125
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0 Volts
Ciss
-
860
VDS = -25 Volts
Coss
-
350
f = 1 MHz
Crss
-
125
MAX
-
-
0.30
0.35
-4.0
-
UNIT
V
V
S
V
S(É)
-25
250
:A
-100
100
nA
29
7.1
nC
21
60
140
140
nsec
140
-4.7
V
250
nsec
3
:C
-
-
pF
-
For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.
NOTES:
1/ All package pins of the same terminations (Drain/Source/Gate) must be connected together to minimize
R_DS(on) and maximize current carrying capability.