FP0035_15 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – P-CHANNEL POWER MOSFET

PRELIMINARY
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
DESIGNER'S DATA SHEET
FEATURES:
• Rugged construction with poly silicon gate
• Low RDS (on) and high transconductance
• Excellent high temperature stability
• Very fast switching speed
• Fast recovery and superior dv/dt performance
• Increased reverse energy capability
• Low input transfer capacitance for easy paralleling
• Hermetically sealed surface mount package
• TX, TXV and Space Level screening available
• Replaces: 2x IRF9130 Types
MAXIMUM RATINGS
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Operating and Storage Temperature
T_C = 25^oC
T_C = 100^oC
Thermal Resistance, Junction to Case (Both)
Total Device Dissipation
T_C = 25^oC
T_C = 55^oC
Single Pulse Avalange Energy
Repetitive Avalange Energy
PACKAGE OUTLINE: 28 PIN CLCC
PIN OUT:
SOURCE (1): 16 - 21
DRAIN (1): 24 - 28
GATE (1): 22
SOURCE (2): 9 - 14
DRAIN (2): 2 - 6
GATE (2): 8
NOTE:
All drain/source pins must be connected on
the PC board in order to maximize current
carrying capability and to minimize RDS (on)
SFF9130-28D
-11 AMP
-100 VOLTS
0.30S
DUAL UNCOMMITED
P-CHANNEL POWER MOSFET
28 PIN CLCC
SYMBOL
V_DS
V_GS
I_D
T_op & T_stg
R_2JC
P_D
E_AS
E_AR
VALUE
-100
±20
-11
-7
-55 to +150
3.5
36
37
84
7.5
UNIT
Volts
Volts
Amps
o_C
o_C/W
Watts
mJ
mJ
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FP0035D