FP0025E_15 Datasheet, PDF (2/3 Pages) Solid States Devices, Inc – POWER MOSFET

SFF9130M
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
Electrical Characteristics^3/
SFF9130Z
Symbol Min Typ Max
Drain to Source Breakdown Voltage
(V_GS = 0V, I_D = 1mA)
Temperature Coefficient of Breakdown Voltage
BV_DSS -100
––
––
∆BV_DSS
∆Tj
––
87
––
Drain to Source On State Resistance
(V_GS = -10V)
Gate Threshold Voltage
(V_DS = V_GS, I_D = -250A)
Forward Transconductance
(V_DS > I_D(on) x R_DS(on) Max, I_DS = 7A)
Zero Gate Voltage Drain Current
(V_DS = 80% max rated voltage, V_GS = 0V)
(V_DS = 80% rated V_DS, V_GS = 0V, T_A=125°C)
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
I_D=7A
I_D=11A
R_DS(on)
––
––
–– 0.30
–– 0.35
V_GS(th)
-2.0
––
-4.0
g_fs
3.0 5.0 ––
I_DSS
––
––
-25
––
–– 250
At Rated V_GS I_GSS
––
––
–– -100
––
100
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
Diode Forward Voltage
Diode Reverse Recovery Time
Reverse Recovery Charge
V_GS = -10V
50% rated VDS
I_D = -11A
V_DD = 50%
Rated VDS
I_D = 11 A
R_G = 7.5Ω
I_S = Rated I_D
V_GS = 0V
T_J = 25ºC
T_J = 25ºC
I_F = 10A
di/dt = 100A/µsec
Q_g
Q_gs
Q_gd
t_(on)
t_r
t_d(off)
t_r
V_SD
t_rr
Q_rr
15
26
29
1
3
9.5
2
14
21
––
15
60
––
10 140
––
30 140
––
12 140
––
–– -4.7
–– 125 250
––
––
3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V_GS = 0V
V_DS = -25V
f = 1 MHz
C_iss
C_oss
C_rss
–– 860 ––
–– 350 ––
–– 125 ––
Units
V
mV/°C
Ω
V
S(Ʊ)
A
nA
nC
nsec
V
nsec
µC
pF
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FP0025E
DOC