FP0025E_15 Datasheet, PDF (1/3 Pages) Solid States Devices, Inc – POWER MOSFET

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information ^1/
SFF9130 _{__ __ __}
│ │ └ Screening^2/
││
__ = Not Screened
││
TX = TX Level
││
TXV = TXV Level
││
S = S Level
│ └ ^{Lead Option}
│
__ = Straight Leads
│
│
└
DB = Down Bend
UB = Up Bend
Package
M = TO-254
Z = TO-254Z
Maximum Ratings^3/
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
Operating & Storage Temperature
Thermal Resistance, Junction to Case
Total Device Power Dissipation
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
SFF9130M
SFF9130Z
-11 AMP
P-Channel POWER MOSFET
100 Volts
0.30 Ω typical
Features:
 Rugged Construction with Poly Silicon Gate
 Low RDS(on) and High Transconductance
 Excellent High Temperature Stability
 Very Fast Switching Speed
 Fast Recovery and Superior dv/dt Performance
 Increased Reverse Energy Capability
 Low Input and Transfer Capacitance for Easy
Paralleling
 Hermetically Sealed
 TX, TXV, and Space Level Screening Available
 Replaces IRF9130 Types
T_C = 25ºC
T_C = 100ºC
T_C = 25ºC
T_C = -55ºC
Symbol
V_DS
V_GS
I_D
T_OP & T_STG
R_JC
P_D
E_AS
Value
-100
+20
-11
-7
-55 to +150
2
63
48
81
Units
V
V
A
ºC
ºC/W
Watts
mJ
E_AR
7.5
mJ
NOTES:
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, all electrical characteristics @25^oC.
TO-254 (M)
TO-254Z (Z)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FP0025E
DOC