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FP0015_15 Datasheet, PDF (2/2 Pages) Solid States Devices, Inc – POWER MOSFET
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Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFF9140J
ELECTRICAL CHARACTERISTICS
Symbol
Drain to Source Breakdown Voltage
(VGS = 0 V, ID = 1 mA)
Temperature Coefficient of Breakdown Voltage
Drain to Source ON State Resistance
(VGS = -10 V)
ID = 11A
ID = 18A
Gate Threshold Voltage
(VDS = VGS, ID = 250µA)
Forward Transconductance
(VDS > 10V, IDS = 11A)
Zero Gate Voltage Drain Current
(VDS = 80% rated VDS, VGS = 0 V)
(VDS = 80% rated VDS, VGS = 0 V, TA = 125oC)
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
At rated VGS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn ON Delay Time
Rise Time
Turn OFF Delay Time
Fall TIme
Diode Forward Voltage
(IS = rated ID, VGS = 0 V, TJ = 25°C)
Diode Reverse Recovery Time
Reverse Recovery Charge
VGS = -10 Volts
50% rated VDS
ID = -18 A)
(VDD = 50% of
rated VDS
rated ID
RG = 9.1 Ω)
TJ = 25oC
IF = rated ID
di/dt = 100 A/µsec
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0 Volts
VDS = -25 Volts
f = 1 MHz
∆BVDSS
∆BVDSS
TJ
RDS(on)
VGS(th)
gfs
IDSS
IgSS
Qg
Qgs
Qgd
td(on)r
tr
td(off)
tf
VSD
trr
QRR
Ciss
Coss
Crss
Min
-100
––
––
––
-2.0
6.1
––
––
––
––
31
––
7
––
––
––
––
––
––
––
––
––
––
Typ
––
0.087
0.15
––
––
8.0
––
––
––
––
50
3
25
15
8
35
20
––
170
––
1400
600
200
Max
––
––
0.20
0.23
-4.0
––
25
250
-100
100
70
15
45
35
85
85
65
-4.2
280
3.6
1650
740
260
Unit
Volts
Volts
Ω
Volts
S mho
µA
nA
nC
ns
Volts
ns
µC
ns