FP0015_15 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – POWER MOSFET

Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
Designer’s Data Sheet
FEATURES:
• Rugged Construction with Poly Silicon Gate
• Low RDS(on) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dv/dt Performance
• Increased Reverse Energy Capability
• Low Input and Transfer Capacitance for Easy
Paralleling
• Hermetically Sealed
• Replaces: IRF9140 Types
• TX, TXV, and Space Level Screening Available.
Consult Factory.
MAXIMUM RATINGS
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Total Device Dissipation
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
PACKAGE OUTLINE:
TO-257 (J)
PINOUT:
PIN 1: DRAIN
PIN 2: SOURCE
PIN 3: GATE
SFF9140J
TO-257
-18 AMPS
-100 VOLTS
0.20 Ω
P-CHANNEL
POWER MOSFET
T_{C =} 25^oC
T_{C =} 100^oC
T_{C =} 25^oC
T_{C =} 55^oC
Symbol
V_DS
V_GS
I_D
T_OP & T_stg
R_θJC
P_D
E_AS
E_AR
Value
-100
±20
-18
-11
-55 to +150
2.0
63
48
500
12.5
Units
Volts
Volts
Amps
o_C
o_C/W
Watts
mJ
mJ
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
SUFFIX JDB
DATA SHEET #: FP0015G
SUFFIX JUB
DOC