F00307B_15 Datasheet, PDF (2/2 Pages) Solid States Devices, Inc – N-Channel Power MOSFET

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
SFF130/3 & SFF130/66
Electrical Characteristics @ T_J = 25ºC
(Unless Otherwise Specified)
Drain to Source Breakdown Voltage
(VGS=0 V, ID=250 μA)
Temperature Coefficient of Breakdown Voltage
Drain to Source On State Resistance
(VGS=10 V )
ID=9A
ID=14A
Gate Threshold Voltage
(VDS=VGS, ID=250 μA )
Forward Transconductance
(VDS>ID(on) X RDS(on) Max, IDS= 9A)
Zero Gate Voltage Drain Current
(VDS=80% max rated voltage, VGS=0 V)
(VDS=80% rated VDS, VGS=0 V, TA=125ºC)
Symbol
BV_DSS
ΔBVDSS
ΔTj
R_DS(on)
V_GS(th)
g_fs
I_DSS
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
At rated VGS
I_GSS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn on Delay Time
Fall Time
VGS=10 Volts
50% rated VDS
Rated ID
VDD=50%
Rated VDS
50% rated ID
RG= 7.5Ω
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Diode Forward Voltage
(IS= Rated ID, VGS=0 V, TJ=25ºC)
Diode Reverse Recovery Time
Reverse Recovery Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
T_J=25ºC
IF=10A
Di/dt=100A/μsec
VGS=0 Volts
VDS=25 Volts
f=1 MHz
V_SD
t_rr
Q_RR
C_iss
C_{o ss}
C_rss
Min
100
––
––
2.0
4.6
––
––
––
––
12
1.5
5
––
––
––
––
––
––
––
––
––
––
Typ
––
130
0.13
0.14
2.8
7
––
––
––
––
17
3.7
7.0
9.5
42
22
25
1
120
0.58
650
250
44
Max Units
––
––
0.18
0.21
4.0
Volts
mV/ ºC
Ω
V
––
mho
25
250
+100
-100
35
10
20
35
80
60
45
1.5
300
3
––
––
––
μA
nA
nC
nsec
V
nsec
μC
pF
For thermal derating curves and other characteristics please contact SSDI Marketing Department.
Available Part Number:
SFF130/3; SFF130/66
PIN ASSIGNMENT (Standard)
Package
TO-3
TO-66
Drain
Case
Case
Source
Pin 2
Pin 2
Gate
Pin 1
Pin 1
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00307B
DOC