F00307B_15 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – N-Channel Power MOSFET

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information ^1/
SFF130 __ __
│ └ Screening ^2/
│ _{__ = Not Screen}
│
TX = TX Level
│
│
TXV = TXV Level
│
S = S Level
│ ^Package
└ ^{/3= TO-3}
/66= TO-66
TO-66
TO-3
Maximum Ratings ^3/
Drain – Source Voltage
Gate – Source Voltage
Continuous Collector Current
Power Dissipation
Operating & Storage Temperature
Thermal Resistance Junction to Case
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
TO-66
SFF130/3 & SFF130/66
14 AMP / 100 Volts
0.18 Ω
N-Channel Power MOSFET
Features:
• Rugged Construction with Poly Silicon Gate
• Low RDS(ON) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dV/dt Performance
• Increased Reverse Energy Capability
• Low Input and Transfer Capacitance for Easy Paralleling
• Hermetically Sealed Package
• Available in both hot case and isolated versions
• Ideal for low power applications
• TX, TXV, Space Level Screening Available ^2/
• Replacement for IRFF130 & 2N6756 Types
T_C = 25ºC
T_C = 100ºC
T_C = 25ºC
T_A = 25ºC
Symbol
V_DS
V_GS
I_D
P_D
Top & Tstg
R_{θ JC}
E_AS
E_AR
Value
100
±20
14
9
25
19
-55 to +150
5
75
7.5
Units
Volts
Volts
Amps
Watts
ºC
ºC/W
mJ
mJ
TO-3
.135 MAX
Ø.875
MAX
2x Ø..116551
SEATING PLANE
2x
.043
.038
.440
.420
2x
.
.
225
205
.525 MAX
.675
.655
2
1
2x R.188 MAX
.450
.250
2x .312 MIN
1.197
1.177
NOTES: 1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screened to MIL-PRF-19500/542.
3/ Unless Otherwise Specified, All Maximum Ratings and Electrical Characteristics @25ºC.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00307B
DOC