F00265E Datasheet, PDF (2/2 Pages) Solid States Devices, Inc – POWER MOSFET

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
Electrical Characteristics @ T_J = 25ºC
(Unless Otherwise Specified)
Drain to Source Breakdown Voltage
(VGS=0 V, ID=250A
Drain to Source On State Resistance
(VGS=5 V, ID=18A
Drain to Source On Resistance
(VGS=4 V, ID= 15A
Gate Threshold Voltage
(VDS=VGS, ID= 250A
Forward Transconductance
(VDS>10V, IDS=18A
Zero Gate Voltage Drain Current
(VDS=max rated voltage, VGS=0 V)
(VDS=80% rated VDS, VGS=0 V, TA=150ºC)
Symbol
BV_DSS
R_DS(on)1
R_DS(on)2
V_GS(th)
g_fs
I_DSS
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn on Delay Time
Fall Time
Diode Forward Voltage
(IS= Rated ID, VGS=0 V, TJ=25ºC)
Diode Reverse Recovery Time
Input Capacitance
Input Capacitance
Reverse Transfer Capacitance
At rated VGS
VGS= 5 Volts
80% rated VDS
ID= 15 A
VDD=50% Rated VDS
ID= 15 A
RG= 4.6 
RD= 0.56 
T_J=25ºC, IF= 10 A
di/dt=100A/sec
VGS=0 Volts
VDS=25 Volts
f=1 MHz
I_GSS
Q_g
Q_gs
Q_gd
td_(on)
tr
td_(off)
tf
V_SD
t_rr
C_iss
C_oss
C_rss
SFL044J
Min
60
––
1.0
22
––
––
––
––
––
––
––
––
––
––
––
––
––
––
––
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Typ
––
0.032
0.034
1.5
35
––
––
––
––
45
15
15
30
10
70
25
1.2
100
3300
1100
50
Max Units
––
Volts
0.036

0.040

2.0
V
––
S(mho)
25
250
A
+100
-100
66
20
43
––
––
––
––
2.5
nA
nC
nsec
V
180
nsec
––
––
pF
––
For thermal derating curves and other characteristics please contact SSDI Marketing Department.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00265E
DOC