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F00265E Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – POWER MOSFET
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SFL044 _J_ __ __
│ │ └ Screening 2/ __ = Not Screen
││
││
││
││
TX = TX Level
TXV = TXV Level
S = S Level
│ └ Lead Option 3/ __ = Straight
│
UB = Up Bend
│
DB= Down Bend
│
└ Package: TO-257
TO-257 Pin Out: Pin1: Drain
Pin2: Source
Pin3: Gate
SFL044J
30 AMP / 60 Volts / 0.030 Ω
N-Channel, Logic Level
POWER MOSFET
Features:
 Logic Level Gate Drive
 Rugged Construction with Polysilicon Gate
 Low RDS(ON) and High Transconductance
 Excellent High Temperature Stability
 Very Fast Switching Speed
 Fast Recovery and Superior dV/dt Performance
 Increased Reverse Energy Capability
 Low Input and Transfer Capacitance for Easy Paralleling
 Hermetically Sealed Surface Mount Power Package
 Ceramic Seals Available for Improved Hermeticity
 TX, TXV, Space Level Screening Available
 Replacement for IRLIZ44G Types
Maximum Ratings
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current @ VGS = 5V
Operating & Storage Temperature
Thermal Resistance, Junction to Case
Power Dissipation
TC = 25ºC
TC = 55ºC
Symbol
VDS
VGS
ID
Top & Tstg
RJC
PD
Value
60
±10
30
-55 to +175
2
63
48
Units
Volts
Volts
Amps
ºC
ºC/W
W
Ø..115400
.660
.645 .430
.410
1.100
.500
2x
.180
.150
.200
MIN
.420
.410
PIN 3
.105
PIN 2
.095
PIN 1
SUFFIX: JD
.200
MIN
.537
.527
.210
.190
3x Ø..003255
.125
.110
SUFFIX JDB
.045
.035
SUFFIX: J
Notes: 1/ For ordering information, Price, and Availability, Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Per Leg.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00265E
SUFFIX: JU
.180
.150
SUFFIX JUB
DOC