F00257 Datasheet, PDF (2/2 Pages) Solid States Devices, Inc – N-CHANNEL MOSFET

SFF75N05M
SFF75N05Z
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
ELECTRICAL CHARACTERISTICS @ T_J =25^oC (Unless Otherwise Specified)
RATING
Drain to Source Breakdown Voltage
(VGS =0 V, ID = 250µA)
Drain to Source on State Resistance
(VGS = 10 V,Tc = 150^oC)
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10 V)
SYMBOL MIN
TYP
MAX UNIT
BV_DSS
50
-
-
V
ID=37.5A
-
ID=75A
R_DS(on)
-
ID=37.5A
-
13
15
15
17
mΩ
19
I_D(on)
75
-
-
A
Gate Threshold Voltage
(VDS = VGS, ID = 250µA)
Forward Transconductance
(VDS > ID(on) X RDS (on) Max, IDS=20 Amps)
V_GS(th)
2
gf_s
15
-
4.0
V
35
-
Smho
Zero Gate Voltage Drain Current
(V_DS = max rated voltage, V_GS = 0 V)
(V_DS = 80% rated V_DS, V_GS = 0V, T_A = 125^oC)
I_DSS
-
-
-
-
10
100
µA
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
At rated VGS
I_GSS
-
-
-
-
100
100
nA
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off DelayTime
Fall Time
Diode Forvard Voltage
(I_S = rated I_D, V_GS = 0V, T_J = 25^oC)
Diode Reverse Recovery Time
Reverse Recovery Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 10 V
Qg
-
80% rated VDS
Qgs
-
Rated ID
Qgd
-
VDD =50%
t_{d (on)}
-
rated VDS
tr
-
rated ID
RG=9.1Ω
t_{d (off)}
-
tf
-
80
100
13
20
nC
40
55
20
40
35
65
70
130
nsec
40
80
TJ =25^oC
IF = 10A
di/dt = 100A/µsec
VGS =0 Volts
VDS =25 Volts
f =1 MHz
V_SD
t_rr
Q_RR
Ciss
Coss
Crss
-
1.47
1.6
V
-
70
40/35
150
nsec
-
2600
2900
-
700
1100
pF
-
260
275
For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.
NOTES:
1/ Maximum current limited by package, die rated at 75A.