F00257 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – N-CHANNEL MOSFET

SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
DESIGNER'S DATA SHEET
FEATURES:
• Advanced high-cell density withstands high energy
• Very low conduction and switching losses
• Fast recovery drain-to-source diode with soft recovery
• Rugged construction with poly silicon gate
• Ultra low RDS (on) and high transconductance
• Excellent high temperature stability
• Very fast switching speed
• Fast recovery and superior dv/dt performance
• Increased reverse energy capability
• Low input and transfer capacitance for easy paralleling
• Hermetically sealed package
• TX, TXV and Space Level screening available
SFF75N05M
SFF75N05Z
75 AMP
50 VOLTS
15mΩ
N-CHANNEL
MOSFET
TO-254 (M)
TO-254Z (Z)
MAXIMUM RATINGS
CHARACTERISTIC
Drain to Source Voltage
Drain to Gate Voltage (RGS = 1.0 mΩ)
SYMBOL
V_DS
V_DG
VALUE
50
50
UNIT
Volts
Volts
Gate to Source Voltage
Continuous Drain Current
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Total Device Dissipation
@TC=25^oC
@TC=100^oC
@ TC = 25^oC
@ TC = 55^oC
V_GS
I_D
T_op & T_stg
R_0JC
P_D
+ 20
56^1/
46
-55 to +175
1
150
120
Volts
Amps
o_C
o_C/W
Watts
CASE OUTLINE: TO-254 (Sufix M)
Pin Out:
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
CASE OUTLINE: TO-254Z (Sufix Z)
Pin Out:
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
Available with Glass or Ceramic Seals. Contact Facory for details.
NOTE: All specifications are subject to change without notification.
SCDs for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00257E