F00225 Datasheet, PDF (2/2 Pages) Solid States Devices, Inc – QUAD N-CHANNEL POWER MOSFET

SFF120-28Q
PRELIMINARY
SOLID STATE DEVICES, INC.
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: [phone] * Fax: [phone]
ELECTRICAL CHARACTERISTICS @ T_J =25^oC (Unless Otherwise Specified)
RATING
SYMBOL MIN
TYP
Drain to Source Breakdown Voltage
(VGS =0 V, ID =250:A)
Drain to Source ON State Resistance
(VGS = 10 V, 60% of Rated ID)
BV_DSS
100
-
R_DS(on)
-
-
ON State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10 V)
I_D(on)
9.2
-
Gate Threshold Voltage
(VDS =VGS, ID =250:A)
V_GS(th)
2.0
-
Forward Transconductance
(VDS > ID(on) x RDS (on) Max, IDS =60% rated ID)
gf_s
2.7
4.1
Zero Gate Voltage Drain Current
(V_DS = max rated Voltage, V_GS = 0V)
(V_DS = 80% rated V_DS, V_GS = 0V, T_A = 125^oC)
I_DSS
-
-
-
-
MAX
-
0.35
-
4.0
-
UNIT
V
S
A
V
S(É)
25
250
:A
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
At rated VGS
I_GSS
-
-
-
-
+100
-100
nA
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
VGS = 10 V
Qg
-
10.7
16
80% rated VDS
Qgs
-
2.9
4.4
nC
60% rated ID
Qgd
-
5.1
7.7
Turn on Delay Time
Rise Time
Turn off DELAY Time
Fall Time
VDD =50%
t_{d (on)}
-
rated VDS
tr
-
50% rated ID
t_{d (off)}
-
RG = 18 S
tf
-
13
20
30
19
45
29
nsec
20
30
Diode Forvard Voltage
(I_S = rated I_D, V_GS = 0V, T_J = 25^oC)
V_SD
-
-
2.5
V
Diode Reverse Recovery Time
Reverse Recovery Charge
TJ =25^oC
IF = rated ID
t_rr
55
di/dt = 100A/:sec
Q_RR
0.25
140
0.65
260
nsec
1.3
:C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS =0 Volts
Ciss
-
350
-
VDS =25 Volts
Coss
-
130
-
pF
f =1 MHz
Crss
-
36
-
For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.
NOTES: