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F00225 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – QUAD N-CHANNEL POWER MOSFET
PRELIMINARY
SOLID STATE DEVICES, INC.
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: (562) 404-4474 * Fax: (562) 404-1773
DESIGNER'S DATA SHEET
FEATURES:
• Rugged construction with poly silicon gate
• Low RDS (on) and high transconductance
• Excellent high temperature stability
• Very fast switching speed
• Fast recovery and superior dv/dt performance
• Increased reverse energy capability
• Low input and transfer capacitance for easy paralleling
• Hermetically sealed surface mount package
• TX, TXV and Space Level screening available
• Replaces 4x IRF120 Types in One Package
MAXIMUM RATINGS
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Operating and Storage Temperature
Thermal Resistance, Junction to Case (All Four)
Total Device Dissipation
@ TC = 25oC
@ TC = 70oC
SFF120-28Q
9.2 AMPS
100 VOLTS
0.35S
QUAD N-CHANNEL
POWER MOSFET
28 PIN CLCC
SYMBOL
VDS
VGS
ID
Top & Tstg
R2JC
PD
VALUE
100
±20
9.2
-55 to +150
10
12.5
9.5
UNIT
Volts
Volts
Amps
oC
oC/W
Watts
PACKAGE OUTLINE: 28 PIN CLCC
PIN OUT:
MOSFET 1
(3 PLACES)
DRAIN: 5, 6, 7
GATE:
1
SOURCE: 2, 3, 4
MOSFET 2
DRAIN: 9, 10, 11
GATE:
8
SOURCE: 12, 13, 14
MOSFET 3
DRAIN: 19, 20, 21
GATE:
15
SOURCE: 16, 17, 18
MOSFET 4
DRAIN: 23, 24, 25
GATE:
22
SOURCE: 26, 27, 28
NOTE: All drain/source pins must be connected on the PC board in order to
maximize current carrying capability and to minimize RDS (on)
NOTE: All specifications are subject to change without notification.
SCDs for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00225B