F00213_15 Datasheet, PDF (2/3 Pages) Solid States Devices, Inc – N-Channel MOSFET

Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
Electrical Characteristics ^4/
Drain to Source Breakdown Voltage
(V_GS = 0V, I_D = 250µA)
Drain to Source On State Resistance
(V_GS = 10V, I_D = 5.5A)
On State Drain Current
(V_DS > I_D(on) x R_DS(on) Max, V_GS = 10V)
Gate Threshold Voltage
(V_DS = V_GS, I_D = 250µA)
Gate to Source Leakage
(V_GS = ±20V)
Zero Gate Voltage Drain Current
(V_GS = 0V)
Forward Transconductance *
(V_DS > I_D(on) x R_DS(on) Max, I_D = 5.5A)
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn on Delay Time
Fall Time
Diode Forward Voltage *
(I_F = 11A, V_GS = 0V)
Diode Reverse Recovery Time
(I_F = 11A, di/dt = 100A/µsec)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V_DS = 800V, T_A = 25ºC
V_DS = 640V, T_A = 125ºC
V_GS = 10V
V_DS = 640V
I_D = 5.5A
V_DS = 400V
I_D = 5.5A
R_G = 2.0Ω
V_GS = 0V
V_DS = 25V
f = 1MHz
NOTES:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening per MIL-PRF-19500
3/ For Package Outlines Contact Factory.
4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
Symbol
BV_DSS
R_DS(on)
I_D(on)
V_GS(th)
I_GSS
I_DSS
g_fs
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
V_SD
t_rr
C_iss
C_oss
C_rss
SFF11N80 Series
Min
Typ
Max
800
––
––
––
––
0.95
11
––
––
2.0
––
4.5
––
––
±100
––
––
250
––
––
1.0
8.0
14
––
––
128
145
––
30
55
––
55
80
––
20
50
––
33
50
––
63
100
––
32
50
––
––
1.5
––
––
550
––
4200
––
––
360
––
––
100
––
Units
Volts
Ω
A
V
nA
µA
mA
Mho
nC
nsec
V
nsec
pF
Available Part Numbers:
SFF11N80M; SFF11N80MDB; SFF11N80MUB;
SFF11N80Z; SFF11N80ZDB; SFF11N80ZUB;
PIN ASSIGNMENT (Standard)
Package
TO-254 (M)
TO-254Z (Z)
Drain
Pin 1
Pin 1
Source
Pin 2
Pin 2
Gate
Pin 3
Pin 3