F00213_15 Datasheet, PDF (1/3 Pages) Solid States Devices, Inc – N-Channel MOSFET

Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information ^1/
SFF11N80 __ __ __
│ │ └ Screening ^2/ __ = Not Screen
││
TX = TX Level
││
TXV = TXV Level
││
││
S = S Level
│ └ Lead Option ^3/ __ = Straight Leads
│
DB = Down Bend
│
UB = Up Bend
│
└ Package ^3/ M = TO-254
Z = TO-254Z
SFF11N80 Series
11 AMP / 800 Volts
0.95 Ω
N-Channel MOSFET
Features:
• Rugged Construction with Polysilicon Gate Cell
• Low RDS(ON) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dV/dt performance
• Increased Reverse Energy Capability
• Low Input and Transfer Capacitance for Easy Paralleling
• Hermetically Sealed, Isolated Package
• Ceramic Seal Package Available. Contact Factory
• TX, TXV, S-Level screening available
• Replacement for IXTH11N80 Types
Maximum Ratings
Drain – Source Voltage
Gate – Source Voltage
Continues Collector Current
Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Case
TO-254 (M)
Symbol
T_C = 25ºC
T_C = 55ºC
V_DS
V_GS
I_D
P_D
Top & Tstg
R_θJC
TO-254Z (Z)
Value
800
±20
11
150
114
-55 to +175
0.83
Units
Volts
Volts
Amps
W
ºC
ºC/W
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00213C
DOC