F00175 Datasheet, PDF (2/2 Pages) Solid States Devices, Inc – Power MOSFET

Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
SFF24N50/3
SFF24N50/3T
Electrical Characteristics @ T_J = 25ºC
(Unless Otherwise Specified)
Drain to Source Breakdown Voltage
(VGS=0 V, ID=250 µA)
Drain to Source On State Resistance
(VGS=10 V, ID=50% Rated ID)
On State Drain Current
(VDS>ID(on) X RDS(on) Max, VGS=10V)
Gate Threshold Voltage
(VDS=VGS, ID= 4mA)
Forward Transconductance
(VDS>ID(on) X RDS(on) Max, IDS= 50% Rated ID)
Zero Gate Voltage Drain Current
(VDS=max rated voltage, VGS=0 V)
(VDS=80% rated VDS, VGS=0 V, TA=125ºC)
Symbol
BV_DSS
R_DS(on)
I_D(on)
V_GS(th)
g_fs
I_DSS
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
At rated VGS
I_GSS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
VGS=10 Volts
Q_g
50% rated VDS
Q_gs
50% Rated ID
Q_gd
Turn on Delay Time
Rise Time
Turn on Delay Time
Fall Time
VDD=50% Rated VDS
50% Rated ID
RG= 6.2Ω
VGS=10 Volts
td(on)
tr
td(off)
tf
Diode Forward Voltage
(IS= Rated ID, VGS=0 V, TJ=25ºC)
V_SD
Diode Reverse Recovery Time
Reverse Recovery Charge
T_J=25ºC
IF=10A
Di/dt=100A/µsec
t_rr
Q_RR
Input Capacitance
Input Capacitance
Reverse Transfer Capacitance
VGS=0 Volts
VDS=25 Volts
f=1 MHz
C_iss
C_oss
C_rss
Min
500
––
24
2.0
8
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Typ
––
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12
––
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135
28
62
16
33
65
30
––
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4200
450
135
Max
––
0.2
––
4.0
––
250
1000
+100
-100
180
40
85
30
45
130
40
1.5
500
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Units
Volts
Ω
A
V
mho
µA
nA
nC
nsec
V
nsec
nC
pF
For thermal derating curves and other characteristics please contact SSDI Marketing Department.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00175E
DOC