F00175 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – Power MOSFET

Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Features:
• Rugged Construction with Polysilicon Gate Cell
• Low RDS(ON) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dV/dt Performance
• Increased Reverse Energy Capability
• Low Input and Transfer Capacitance for Easy Paralleling
• Hermetically Sealed Surface Mount Power Package
• TX, TXV, Space Level Screening Available
• Replacement for IXTH24N50 Types
SFF24N50/3
SFF24N50/3T
24 AMP / 500 Volts
0.2 Ω
N-Channel
Power MOSFET
TO-3
Maximum Ratings
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current (Tj limited)
Avalanche Current
Avalanche Energy
Operating & Storage Temperature
Thermal Resistance, Junction to Case
Total Device Dissipation @ TC=25ºC
Total Device Dissipation @ TC=55ºC
Package Outline: TO-3
Pin Out:
Pin 1: GATE
Pin 2: SOURCE
Pin 3: DRAIN
Notes:
1. P/N: SFF 24N50/3:
Pin Diameter : 0.043”
0.038”
2. P/N: SFF24N50/3T:
Pin Diameter: 0.063”
0.058”
.135 MAX
Ø.875
MAX
.450
.250
Symbol
Repetitive
Repetitive
Single Pulse
V_DS
V_GS
I_D
I_AR
E_AR
E_AS
Top & Tstg
R_θJC
PD
Value
500
±20
24
21
1
690
-55 to +150
0.75
(typ 0.6)
167
126
Units
Volts
Volts
Amps
Amps
mJ
ºC
ºC/W
WATTS
2x Ø..116551
SEATING PLANE
2x
.043
.038
.440
.420
2x
.225
.205
.525 MAX
.675
.655
2
1
2x R.188 MAX
2x .312 MIN
1.197
1.177
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00175E
DOC