F00087B Datasheet, PDF (2/3 Pages) Solid States Devices, Inc – POWER MOSFET

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
Electrical Characteristics^4/
SFF440J
Symbol Min Typ Max Units
Drain to Source Breakdown Voltage
Drain to Source On State Resistance
V_GS = 0V, I_D = 250 µA BV_DSS 500 570 ––
V
V_GS = 10V, I_D = 60% Rated I_D R_DS(on)
–– 0.65 0.86
Ω
On State Drain Current
V_DS > I_D(on) x R_DS(on) Max, V_GS = 10V
I_D(on)
8
12 ––
A
Gate Threshold Voltage
V_DS = V_GS, I_D = 250µA V_GS(th)
2.0
3.2 4.0
V
Forward Transconductance
V_DS ≥ 50V, I_D = 60% Rated I_D
g_fs
Zero Gate Voltage
Drain Current
V_DS
=
V_DS = max rated
80% Rated V_DS, V_GS
v=o0ltaVg, eT,_AV=_GS12=50oCV
I_DSS
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
At rated V_GS
I_GSS
4.9
6
–– S(Ʊ)
–– 0.015 25
––
5
250
μA
––
––
–– 100
–– -100
nA
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
Diode Forward Voltage
Diode Reverse Recovery Time
Reverse Recovery Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V_GS = 10V
80% Rated V_DS
I_D = 8A
V_DD = 50%
Rated V_DS
I_D= 8 A
R_G = 9.1Ω
R_D = 30Ω
I_S = Rated I_D, V_GS = 0V, T_j = 25^oC
T_j = 25^oC, I_F = Rated I_D, di/dt = 100A/usec
V_GS = 0V
V_DS = 25V
f = 1 MHz
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
V_SD
t_rr
Q_rr
C_iss
C_oss
C_rss
––
30
50
––
8
10
nC
––
12
25
––
30
40
––
––
40
62
60
74
nsec
––
30
40
–– 0.85 1.2
V
210 900 970 nsec
2
7.7 8.9 μC
–– 1450 ––
–– 180 ––
pF
––
40
––
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00087B
DOC