F00087B Datasheet, PDF (1/3 Pages) Solid States Devices, Inc – POWER MOSFET

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information^1/
SFF440
___
│
│
│
│
│
└
____
└ Screening^2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Package^3/
J = TO-257
Maximum Ratings
Drain - Source Voltage
Gate - Source Voltage
Max. Continuous Drain Current (package
limited) @ 25ºC
Operating & Storage Temperature
Maximum Thermal Resistance
(Junction to Case)
Total Power Dissipation
SFF440J
8 AMP
N-Channel
Power MOSFET
500 Volts
0.86 Ω
Features:
 Rugged construction with polysilicon gate
 Low RDS(on) and high transconductance
 Excellent high temperature stability
 Very fast switching speed
 Fast recovery and superior dv/dt performance
 Increased reverse energy capability
 Low input and transfer capacitance for easy
paralleling
 Hermetically sealed package
 Low inductance leads
 TX, TXV, S-Level screening available
 Replaces: IRF440 types
Symbol
V_DS
V_GS
Value
500
±20
Units
V
V
I_D
6.9
A
T_OP & T_STG -55 to +150
ºC
@ T_C = 25ºC
@ T_C = 55ºC
R_θJC
P_D
2
ºC/W
63
48
W
NOTES:
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Maximum current limited by package configuration
4/ Unless otherwise specified, all electrical characteristics @25^oC.
TO-257
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00087B
DOC