F00049E Datasheet, PDF (2/3 Pages) Solid States Devices, Inc – N-Channel POWER MOSFET

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
Electrical Characteristics @ T_J = 25ºC
(Unless Otherwise Specified)
Drain to Source Breakdown Voltage
(VGS= 0 V, ID= 250μA
Drain to Source On State Resistance
(VGS= 10 V, ID= 18 A
Gate Threshold Voltage
(VDS= VGS, ID= 250μA
Forward Transconductance
(VDS≥ IN(on) X RDS(on) Max, ID= 18 A
Zero Gate Voltage Drain Current
(VDS= 200 V, VGS= 0 V)
(VDS= 200 V, VGS= 0 V, TA= 125ºC)
Symbol
BV_DSS
R_DS(on)
V_GS(th)
g_fs
I_DSS
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
At rated VGS
I_GSS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn on Delay Time
Fall Time
Diode Forward Voltage
(IS= 30 A, VGS= 0 V, TJ= 25ºC)
Diode Reverse Recovery Time
Reverse Recovery Charge
Input Capacitance
Input Capacitance
Reverse Transfer Capacitance
VGS=10 V
VDS= 100 V
ID= 30 A
VDD= 100 V
ID= 15 A
RG= 6.2Ω
T_J= 25ºC
IF= 10 A
di/dt= 100 A/μsec
VGS= 0 Volts
VDS= 25 Volts
f= 1 MHz
Q_g
Q_gs
Q_gd
td_(on)
tr
td_(off)
tf
V_SD
t_rr
Q_RR
C_iss
C_oss
C_rss
SFF250M
SFF250Z
Min
200
––
2
10
––
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––
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Typ
––
0.06
3
17
––
––
––
––
70
18
35
29
35
75
35
1.1
150
2.0
4200
650
120
Max Units
––
V
0.085
Ω
5
V
––
mho
25
250
μA
+100
-100
120
25
65
30
180
100
120
1.5
nA
nC
nsec
V
630
nsec
8
μC
––
––
pF
––
For thermal derating curves and other characteristics please contact SSDI Marketing Department.
Available Part Numbers:
SFF250M; SFF250MDB; SFF250MUB;
SFF250Z; SFF250ZDB; SFF250ZUB;
PIN ASSIGNMENT (Standard)
Package
TO-254 (M)
TO-254Z (Z)
Drain
Pin 1
Pin 1
Source
Pin 2
Pin 2
Gate
Pin 3
Pin 3
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00049E
DOC