English
Language : 

F00049E Datasheet, PDF (1/3 Pages) Solid States Devices, Inc – N-Channel POWER MOSFET
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SFF250
__ __ __
│ │ └ Screening 2/ __ = Not Screen
││
TX = TX Level
││
TXV = TXV Level
││
││
S = S Level
│ └ Lead Option 3/ __ = Straight Leads
│
DB = Down Bend
│
UB = Up Bend
│
└ Package 3/ M = TO-254
Z = TO-254Z
SFF250M
SFF250Z
30 AMP / 200 Volts
0.060 Ω typical
N-Channel POWER MOSFET
Features:
• Rugged Construction with Polysilicon Gate Cell
• Low RDS(ON) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dV/dt Performance
• Increased Reverse Energy Capability
• Low Input and Transfer Capacitance for Easy Paralleling
• Ceramic Seals Available for Improved Hermeticity
• Hermetically Sealed Surface Mount Power Package
• TX, TXV, Space Level Screening Available
• Replacement for IRFM250 Types
Maximum Ratings
Drain – Source Voltage
Gate – Source Voltage
Continuous Collector Current
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Case
Total Device Dissipation
TO-254 (M)
Symbol
VDS
VGS
ID
Top & Tstg
TC = 25ºC
TC = 55ºC
RθJC
PD
TO-254Z (Z)
Value
200
±20
30
-55 to +150
1
125
95
Units
Volts
Volts
Amps
ºC
ºC/W
W
For Pin Out Configuration and Optional Lead Bend, See Page 3.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00049E
DOC