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F00049E Datasheet, PDF (1/3 Pages) Solid States Devices, Inc – N-Channel POWER MOSFET | |||
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Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNERâS DATA SHEET
Part Number / Ordering Information 1/
SFF250
__ __ __
â â â Screening 2/ __ = Not Screen
ââ
TX = TX Level
ââ
TXV = TXV Level
ââ
ââ
S = S Level
â â Lead Option 3/ __ = Straight Leads
â
DB = Down Bend
â
UB = Up Bend
â
â Package 3/ M = TO-254
Z = TO-254Z
SFF250M
SFF250Z
30 AMP / 200 Volts
0.060 Ω typical
N-Channel POWER MOSFET
Features:
⢠Rugged Construction with Polysilicon Gate Cell
⢠Low RDS(ON) and High Transconductance
⢠Excellent High Temperature Stability
⢠Very Fast Switching Speed
⢠Fast Recovery and Superior dV/dt Performance
⢠Increased Reverse Energy Capability
⢠Low Input and Transfer Capacitance for Easy Paralleling
⢠Ceramic Seals Available for Improved Hermeticity
⢠Hermetically Sealed Surface Mount Power Package
⢠TX, TXV, Space Level Screening Available
⢠Replacement for IRFM250 Types
Maximum Ratings
Drain â Source Voltage
Gate â Source Voltage
Continuous Collector Current
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Case
Total Device Dissipation
TO-254 (M)
Symbol
VDS
VGS
ID
Top & Tstg
TC = 25ºC
TC = 55ºC
RθJC
PD
TO-254Z (Z)
Value
200
±20
30
-55 to +150
1
125
95
Units
Volts
Volts
Amps
ºC
ºC/W
W
For Pin Out Configuration and Optional Lead Bend, See Page 3.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00049E
DOC
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