2N5015_1 Datasheet, PDF (2/2 Pages) Solid States Devices, Inc – 0.5 AMP, 1000 Volts NPN Transistor

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
Electrical Characteristic ^3/
Collector – Emitter Breakdown Voltage
(I_C = 200 µA_DC, R_BE = 1 KΩ)
Collector–Base Breakdown Voltage
(I_C = 200 µA_DC)
Emitter–Base Breakdown Voltage
(I_E = 50 µA_DC)
Collector Cutoff Current (V_CB = 760 V)
(V_CB = 760 V, T_C = 100°C)
Emitter Cutoff Current (V_EB= 4V)
DC Current Gain ^4/ (I_C = 5 mA_DC, V_CE = 10 V_DC)
(I_C = 20 mA_DC, V_CE = 10 V_DC)
Collector – Emitter Saturation Voltage ^4/
(I_C = 20 mA_DC, I_B = 5 mA_DC)
Base – Emitter Saturation Voltage ^4/
(I_C = 20 mA_DC, I_B = 5 mA_DC)
Current Gain Bandwidth Product
(I_C = 20 mA_DC, V_CE = 10 V_DC, f = 20 MHz)
Output Capacitance
(V_CB = 10 V_DC, I_E = 0 A_DC, f = 1.0 MHz)
Delay Time
Rise Time
Storage Time
Fall Time
V_CC= 125 V_DC,
I_C= 100 mA_DC,
I_B1= 20 mA_DC
I_B2= 20 mA_DC
pw= 2 us
Symbol
BV_CER
BV_CBO
BV_EBO
I_CBO
I_EBO
h_FE
V_CE(Sat)
V_BE(Sat)
f_T
Cob
td
tr
ts
tf
2N5015
Min
1000
1000
5
––
––
—
10
30
––
––
20
––
––
––
––
––
Typ
Max
1300
––
-
––
7
––
0.08
12
6
100
0.003
20
70
80
180
0.07
1.8
0.7
1.0
25
––
12.5
30
50
100
1500
450
200
1200
3000
800
Units
V
V
V
µAdc
µA
––
Vdc
Vdc
MHz
pF
nsec
Case Outline: TO-39
PIN 1: EMITTER
PIN 2: BASE
PIN 3: COLLECTOR
Case Outline: TO-5
PIN 1: EMITTER
PIN 2: BASE
PIN 3: COLLECTOR
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0043E
DOC