2N5015_1 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – 0.5 AMP, 1000 Volts NPN Transistor

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information ^1/
2N50 15 __ __
│ │ └ Screening ^2/
││
__ = Not Screened
││
TX = TX Level
││
TXV = TXV Level
││
S = S Level
│ └ Package
│
/39 = TO-39
│
/5 = TO-5
└ Family / Voltage 1000V
Maximum Ratings
Collector – Emitter Voltage (R_BE= 1 kΩ)
Collector – Base Voltage
Emitter – Base Voltage
Collector – Emitter Breakdown Voltage
Peak Collector Current
Peak Base Current
Total Device Dissipation @ T_C = 100º C
Derate above 100º C
Operating and Storage Temperature
Thermal Resistance, Junction to Case
2N5015
0.5 AMP, 1000 Volts
NPN Transistor
FEATURES:
 BVCER 1000 volts
 Low Saturation Voltage
 Low Leakage at High Temperature
 High Gain, Low Saturation
 200° C Operating, Gold Eutectic Die Attach
 TX, TXV, and S-Level Screening Available
Symbol
V_CER
V_CBO
V_EBO
BV_CEO
I_C
I_B
P_D
T_OP, T_STG
R_θJC
Value
1000
1000
5
450
0.5
250
2.0
20
-65 to +200
50 (typ 22)
Units
V
V
V
V
A
mA
W
mW/ºC
ºC
ºC/W
Notes:
1/ For ordering information, price, operating curves, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, maximum ratings/electrical characteristics at 25°C.
4/ Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%
TO-39
TO-5
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0043E
DOC