2N5013 Datasheet, PDF (2/2 Pages) Solid States Devices, Inc – 0.5 AMP 800 - 1000 Volts NPN Transistor

Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: [phone] * Fax: [phone]
[e-mail] * www.ssdi-power.com
2N5013 thru 2N5015
Electrical Characteristic ^1/
Collector – Emitter Breakdown Voltage
(I_C = 200µA_DC, R_BE = 1KΩ)
Collector–Base Breakdown Voltage
(I_C = 200µA_DC)
Emitter–Base Breakdown Voltage
(I_E = 50µA_DC)
Collector Cutoff Current
(T_C = 100°)
DC Current Gain ^2/
(I_C = 5mA_DC, V_CE = 10V_DC)
(I_C = 20mA_DC, V_CE = 10V_DC)
Collector – Emitter Saturation Voltage ^2/
(I_C = 20mA_DC, I_B = 5mA_DC)
Base – Emitter Saturation Voltage ^2/
(I_C = 20mA_DC, I_B = 5mA_DC)
Current Gain Bandwidth Product
(I_C = 20mA_DC, V_CE = 10V_DC, f = 1 – 20MHz)
Output Capacitance
(V_CB = 10V_DC, I_E = 0A_DC, f = 1.0MHz)
Delay Time
Rise Time
Storage Time
Fall Time
Symbol
2N5013
2N5014
2N5015
2N5013
2N5014
2N5015
BV_CER
BV_CBO
V_CB = 650V (2N5013)
V_CB = 700V (2N5014)
V_CB = 750V (2N5015)
V_CB = 650V (2N5013)
V_CB = 700V (2N5014)
V_CB = 750V (2N5015)
BV_EBO
I_CBO
2N5013
2N5014
2N5015
h_FE
V_CE(Sat)
V_BE(Sat)
f_T
Cob
td
V_CC = 125V_DC,
I_C = 100mA_DC,
tr
I_B1 = 20mA_DC,
I_B2 = 20mA_DC
ts
tf
NOTES:
1/ Unless Otherwise Specified: All Tests @25ºC
2/ Pulse Test: Pulse Width = 300 µS, Duty Cycle = 2%
Min
800
900
1000
800
900
1000
5
––
––
––
––
––
––
10
30
––
––
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20
––
––
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Max
Units
––
V
––
––
12
12
12
100
100
100
180
1.6
1.6
1.8
1.0
––
30
200
1200
3.0
800
V
V
µAdc
––
Vdc
Vdc
MHz
pF
nsec
nsec
µsec
nsec
For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.