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2N5013 Datasheet, PDF (1/2 Pages) Solid States Devices, Inc – 0.5 AMP 800 - 1000 Volts NPN Transistor | |||
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Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNERâS DATA SHEET
FEATURES:
⢠BVCER and BVCEO to 1000 volts
⢠Low Saturation Voltage
⢠Low Leakage at High Temperature
⢠High Gain, Low Saturation
⢠200° C Operating, Gold Eutectic Die Attach
⢠2N5010 thru 2N5012 Also Available, Contact Factory
⢠TX, TXV, and S-Level Screening Available
2N5013 thru 2N5015
0.5 AMP
800 â 1000 Volts
NPN Transistor
Maximum Ratings
Collector â Emitter Voltage (RBE = 1Kâ¦)
Collector â Base Voltage
Emitter â Base Voltage
Peak Collector Current
Peak Base Current
Total Device Dissipation @ TC = 100º C
Derate above 100º C
Operating and Storage Temperature
Thermal Resistance, Junction to Case
CASE OUTLINE: TO-5
PIN 1: EMITTER
PIN 2: BASE
PIN 3: COLLECTOR
2N5013
2N5014
2N5015
2N5013
2N5014
2N5015
Symbol
VCER
VCBO
VEBO
IC
IB
PD
Tj, Tstg
RθJC
Value
800
900
1000
800
900
1000
5
0.5
50
2.0
20
-65 to +200
50
Units
V
V
V
A
mA
W
mW/ºC
ºC
ºC/W
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0043A
DOC
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