SSM9960M Datasheet, PDF (5/6 Pages) Silicon Standard Corp. – DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

SSM9960M/GM
12
I _D =7.0A
10000
9
V_DS =12V
1000
V_DS =16V
V_DS =20V
6
100
3
f=1.0MHz
Ciss
Coss
Crss
0
0
5
10
15
20
25
Q _G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
10
1
7
13
19
25
31
V _DS (V)
Fig 10. Typical Capacitance Characteristics
100
10
Tj=150 ^o C
1
Tj=25 ^o C
0.1
0.01
0
0.4
0.8
1.2
V _SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
3.5
3
2.5
2
1.5
1
0.5
-50
0
50
100
150
T _j , Junction Temperature ( ^o C )
Fig 12. Gate Threshold Voltage vs.
Junction Temperature
8/21/2004 Rev.2.01
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