SSM9960M Datasheet, PDF (1/6 Pages) Silicon Standard Corp. – DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

SSM9960M/GM
DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Simple drive requirement
Lower gate charge
Fast switching characteristics
Description
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
Advanced Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
BV _DSS
R _DS(ON)
I_D
40V
20mΩ
7.8A
D1
D2
G1
G2
The SSM9960M is in the SO-8 package, which is widely preferred for
S1
S2
commercial and industrial surface mount applications, and is well suited
for low voltage applications such as DC/DC converters.
This device is available with Pb-free lead finish (second-level interconnect) as SSM9960GM.
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D @ T_A=25°C
I_D @ T_A=100°C
I_DM
P_D @ T_A=25°C
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Rating
40
± 20
7.8
6.2
20
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient³
Max.
Value
62.5
Unit
°C/W
8/21/2004 Rev.2.01
www.SiliconStandard.com
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