SSM9926GM Datasheet, PDF (4/7 Pages) Silicon Standard Corp. – Dual N-channel Enhancement-mode Power MOSFETs

SSM9926GM
8
7
6
5
4
3
2
1
0
25
50
75
100
125
150
T _c , Case Temperature ( ^o C)
Fig 5. Maximum Drain Current vs.
Case Temperature
2.5
2
1.5
1
0.5
0
0
50
100
150
T_c ( ^oC )
Fig 6. Typical Power Dissipation
100
10
1
0.1 _{T C =25} ^o _C
Single Pulse
0.01
0.1
1
10
V _DS (V)
1ms
10ms
100ms
1s
10s
DC
100
Fig 7. Maximum Safe Operating Area
1
Duty Factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
PDM
t
T
0.001
0.0001
0.001
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135^oC/W
0.01
0.1
1
10
t , Pulse Width (S)
100
1000
Fig 8. Effective Transient Thermal Impedance
3/16/2006 Rev.3.01
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