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| SSM9926GM Datasheet, PDF (1/7 Pages) Silicon Standard Corp. – Dual N-channel Enhancement-mode Power MOSFETs | |||
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SSM9926GM
Dual N-channel Enhancement-mode Power MOSFETs
PRODUCT SUMMARY
BVDSS
R DS(ON)
ID
20V
30mâ¦
6A
Pb-free; RoHS-compliant SO-8
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
DESCRIPTION
The SSM9926GM acheives fast switching performance
with low gate charge without a complex drive circuit. It
is suitable for low voltage applications such as DC/DC
converters and general load-switching circuits.
The SSM9926GM is supplied in an RoHS-compliant
SO-8 package, which is widely used for medium power
commercial and industrial surface mount applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VGS
ID
IDM
PD
TSTG
TJ
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current 3, T A = 25°C
Pulsed drain current 1,2
TA = 70°C
Total power dissipation 3, TA = 25°C
Linear derating factor
Storage temperature range
Operating junction temperature range
THERMAL CHARACTERISTICS
Symbol
RÎJA
Parameter
Maximum thermal resistance, junction-ambient3
Value
20
± 12
6
4.8
26
2
0.016
-55 to 150
-55 to 150
Value
62.5
Units
V
V
A
A
A
W
W/°C
°C
°C
Units
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
3.Mounted on a square inch of copper pad on FR4 board ; 135°C/W when mounted on the minimum pad area required for soldering.
3/16/2006 Rev.3.01
www.SiliconStandard.com
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