SSM9918H Datasheet, PDF (4/6 Pages) Silicon Standard Corp. – N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

SSM9918H,J
50
40
30
20
10
0
25
50
75
100
125
150
T _c , Case Temperature ( ^o C)
Fig 5. Maximum Drain Current v.s.
Case Temperature
60
50
40
30
20
10
0
0
50
100
150
T _c , Case Temperature ( ^o C)
Fig 6. Typical Power Dissipation
1000
100
10us
100us
10
1ms
T _c =25 ^o C
Single Pulse
10ms
100ms
1
1
10
100
V _DS (V)
Fig 7. Maximum Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 8. Effective Transient Thermal Impedance
Rev.2.01 6/26/2003
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