SSM9918H Datasheet, PDF (1/6 Pages) Silicon Standard Corp. – N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

Low on-resistance
D
Capable of 2.5V gate drive
Low drive current
Surface mount package
G
S
Description
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
SSM9918H,J
N-CHANNEL ENHANCEMENT-MODE
POWER MOSFET
BV _DSS
R _DS(ON)
I_D
20V
14mΩ
45A
G _DS
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=125℃
I_DM
P_D@T_C=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 4.5V
Continuous Drain Current, V_GS @ 4.5V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
G
D
S
TO-251(J)
Rating
20
± 12
45
20
140
48
0.38
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Max.
Value
2.6
110
Unit
℃/W
℃/W
Rev.2.01 6/26/2003
www.SiliconStandard.com
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