SSM40T03GH Datasheet, PDF (4/5 Pages) Silicon Standard Corp. – N-channel Enhancement-mode Power MOSFET

12
I _D =18A
9
V _DS =10V
V _DS =15V
V _DS =20V
6
3
0
0
3
6
9
12
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
100us
10
T _C =25°C
Single Pulse
1
0.1
1
1ms
10ms
100ms
DC
10
100
V _DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
SSM40T03GH,J
f=1.0MHz
1000
C _iss
C _oss
100
C _rss
10
1
8
15
22
29
V _DS ,Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
V_DS
90%
10%
V_GS
t_d(on) ^tr
t_{d(off) tf}
V_G
4.5V
Q_GS
Q_G
Q_GD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
2/16/2005 Rev.2.1
www.SiliconStandard.com
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